International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF) 2011

  • 20-21 Jan 2011
  • Tokyo Institute of Technology, Japan

Description

The IWDTF2011 will focus on the science and technologies of gate dielectric films for MOS and memory devices, such as ultrathin SiO2, SiON, high-k gate dielectrics, and ferroelectric films. The topics on other technologies involved in the advanced gate stacks, including metal gate electrodes and high-mobility channel materials, will also be discussed.

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Please, check "International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF)" official website for possible changes, before making any traveling arrangements

Event Categories

Industry: Electronics & Electrical
Science: Engineering
Technology: Materials

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