ICSCRM 2025: International Conference on Silicon Carbide and Related Materials

Topics

• SiC Bulk Growth
• Fundamentals (Theoretical and Experimental)
• New Materials Grown on SiC (e.g. Graphene)
• SiC Epitaxial Growth
• Defect Engineering
• Material Characterization
• Device Fabrication Processes
• Surfaces and Interfaces
• Device Physics (Measurement, Modeling, Simulation and Reliability)
• Devices (Power Switching Devices, RF Power Devices, High-Temperature Devices, Radiation-Resistant Devices, etc.)
• Circuits and Applications
• Packaging and Modular Technology